Recombination dynamics in single GaAs-nanowires with an axial heterojunction: N- versus p-doped areas

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[1] Sager, D.

[2] Gutsche, C.

[3] Prost, W.

[4] Tegude, F.-J.

[5] Bacher, G.

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| 1600年 / American Institute of Physics Inc.卷 / 113期

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Conference article (CA)

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