Effects of NF3 plasma treatment prior to SiN passivation on the characteristics of AlGaN/GaN HEMT

被引：0
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作者：
Ren, Chunjiang [1 ]
Chen, Tangsheng [1 ]
Jiao, Gang [1 ]
Xue, Fangshi [1 ]
Chen, Chen [1 ]
机构：
[1] National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electron Devices Institute, Nanjing 210016, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2008年 / 29卷 / 12期
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摘要：
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页码：2385 / 2388
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