Gallium-nitride-based devices on silicon

被引：15

作者：

Dadgar, A. ^{[1
]}

Poschenrieder, M. ^{[1
]}

Daumiller, I. ^{[2
]}

Kunze, M. ^{[2
]}

Strittmatter, A. ^{[3
]}

Riemann, T. ^{[1
]}

Bertram, F. ^{[1
]}

Bläsing, J. ^{[1
]}

Schulze, F. ^{[1
]}

Reiher, A. ^{[1
]}

Krtschil, A. ^{[1
]}

Contreras, O. ^{[4
]}

Kaluza, A. ^{[5
]}

Modlich, A. ^{[5
]}

Kamp, M. ^{[5
]}

Reißmann, L. ^{[3
]}

Diez, A. ^{[1
]}

Christen, J. ^{[1
]}

Ponce, F.A. ^{[4
]}

Bimberg, D. ^{[3
]}

Kohn, E. ^{[2
]}

Krost, A. ^{[1
]}

机构：

[1] Otto-von Guericke Univ. Magdeburg, Inst. für Experimentelle Physik, Fak. für Naturwissenschaften, Postfach 4120, 39016 Magdeburg, Germany

[2] University of Ulm, Department of Electron Devices, 89069 Ulm, Germany

[3] Technische Universität Berlin, Inst. für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany

[4] Department of Physics, Arizona State University, Tempe, AZ 85287, United States

[5] Global Light Industries GmbH, Carl-Friedrich-Gauß-Str. 1, 47475 Kamp-Lintfort, Germany

来源：

Physica Status Solidi C: Conferences | 2003年 / 0卷 / 6 SPEC. ISS.期

关键词：

Etching - Field effect transistors - Light emitting diodes - Luminescence - Problem solving - Semiconductor quantum wells - Silicon - Transmission electron microscopy;

D O I：

10.1002/pssc.200303123

中图分类号：

学科分类号：

摘要：

GaN devices on Si are interesting for low-cost, high-power devices as LEDs and FETs. Until recently, most LED and FET devices suffered from cracking and low output power and additionally, from high series resistances for vertically contacted LEDs. Here, we give a brief overview on state of the art crack-free, bright LEDs with an output power up to 0.42 mW and AlGaN/GaN FETs with an output power of 2.5 W/mm at 2 GHz. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1940 / 1949

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