Self-organized growth of sub-monolayer Ge on Si(111)-(7 x 7)

被引:0
|
作者
Yan, Long [1 ]
Zhang, Yong-Ping [1 ]
Peng, Yi-Ping [1 ]
Pang, Shi-Jin [1 ]
Gao, Hong-Jun [1 ]
机构
[1] Beijing Laboratory of Vacuum Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
来源
Wuli Xuebao/Acta Physica Sinica | 2002年 / 51卷 / 05期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1020 / 1021
相关论文
共 50 条
  • [21] Self-organized growth of Ge islands on Si(100) substrates
    Pivac, B
    Kovacevic, I
    Dubcek, P
    Radic, N
    Bernstorff, S
    Slaoui, A
    THIN SOLID FILMS, 2006, 511 (153-156) : 153 - 156
  • [22] Patterns in Ge cluster growth on clean and oxidized Si(111)-(7 x 7) surfaces
    Roy, Anupam
    Bagarti, Trilochan
    Bhattacharjee, K.
    Kundu, K.
    Dev, B. N.
    SURFACE SCIENCE, 2012, 606 (9-10) : 777 - 783
  • [23] A first principles study of sub-monolayer Ge on Si(001)
    Oviedo, J
    Bowler, DR
    Gillan, MJ
    SURFACE SCIENCE, 2002, 515 (2-3) : 483 - 490
  • [24] Patterned Growth of Nanoscale In Clusters on the Si(111)-7x7 and Si(111)-Ge(5x5) Reconstructions
    MacLeod, J. M.
    Psiachos, D.
    Mark, A. G.
    Stott, M. J.
    McLean, A. B.
    PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2007, 61 : 800 - 804
  • [25] Mediation effect of sub-monolayer carbon on interfacial mixing in Ge growth on Si(100)
    Itoh, Yuhki
    Hayase, Ryo
    Hatakeyama, Shinji
    Kawashima, Tomoyuki
    Washio, Katsuyoshi
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 11-12, 2014, 11 (11-12): : 1556 - 1560
  • [26] The preferential, adsorption of Ge on Si(111) 7 x 7 surface
    Yan, L
    Zhang, YP
    Peng, YP
    Pang, SJ
    Gao, HJ
    ACTA PHYSICA SINICA, 2001, 50 (11) : 2132 - 2136
  • [27] GEOMETRICAL STRUCTURES OF THE GE/SI(111) INTERFACE AND THE SI(111) (7X7) SURFACE
    DEV, BN
    MATERLIK, G
    GREY, F
    JOHNSON, RL
    CLAUSNITZER, M
    PHYSICAL REVIEW LETTERS, 1986, 57 (24) : 3058 - 3061
  • [28] Creation and consumption of free Si atoms at the growth front of a CaF monolayer on Si(111)7x7
    Nakayama, T
    Aono, M
    PHYSICAL REVIEW B, 1998, 57 (03) : 1855 - 1859
  • [29] Growth of aluminum on silicon:: Comparison of the Si(111)7 x 7 and Si(111)δ7 x 7-D surfaces
    Khramtsova, EA
    Golek, F
    Bauer, E
    SURFACE REVIEW AND LETTERS, 1998, 5 (01) : 125 - 131
  • [30] Growth and magnetism of self-organized Co nanoplatelets on Si(111) surface
    He, Ke
    Pan, Ming-Hu
    Wang, Jun-Zhong
    Liu, Hong
    Jia, Jin-Feng
    Xue, Qi-Kun
    SURFACE AND INTERFACE ANALYSIS, 2006, 38 (06) : 1028 - 1033