Green/red electroluminescence from metal-oxide-semiconductor devices fabricated by spin-coating of rare-earth organic compounds on silicon

被引:0
|
作者
Dawn Enterprise Co., Ltd., Nagoya 467-0808, Japan [1 ]
不详 [2 ]
机构
来源
Jpn. J. Appl. Phys. | / 6 PART 1卷
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
MOS devices
引用
收藏
相关论文
共 33 条
  • [31] Hot electron impact excitation cross-section of Er3+ and electroluminescence from erbium-implanted silicon metal-oxide-semiconductor tunnel diodes
    Inst fuer Schicht- und Ionentechnik, , Juelich, Germany
    Appl Phys Lett, 19 (2824-2826):
  • [32] Hot electron impact excitation cross-section of Er3+ and electroluminescence from erbium-implanted silicon metal-oxide-semiconductor tunnel diodes
    Wang, S
    Eckau, A
    Neufeld, E
    Carius, R
    Buchal, C
    APPLIED PHYSICS LETTERS, 1997, 71 (19) : 2824 - 2826
  • [33] Ultra shallow and abrupt n+-p junction formations on silicon-on-insulator by solid phase diffusion of arsenic from spin-on-dopant for sub 50 nm Si metal-oxide-semiconductor devices
    Oh, J
    Im, K
    Ahn, CG
    Yang, JH
    Cho, WJ
    Lee, S
    Park, K
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 110 (02): : 185 - 189