Phase formations and electrical properties of (SrxBa1-x)Bi2Ta2O9 thin films

被引：0
|
作者：
Lee, Won-Jae [1 ]
You, In-Kyu [1 ]
Yang, Il-Suk [1 ]
Yu, Byoung-Gon [1 ]
Cho, Kyoung-Ik [1 ]
机构：
[1] Micro-Electronics Technol. Lab., Electronics and Telecom. Res. Inst., 161 Kajong-dong, Yusong-gu, Daejon 305-600, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 9 B期
关键词：
Crystal microstructure - Decomposition - Electric properties - Fatigue of materials - Film preparation - Permittivity - Phase composition - Polarization - Scanning electron microscopy - Spin coating - Strontium compounds - X ray diffraction analysis;
D O I：
10.1143/jjap.39.5469
中图分类号：
学科分类号：
摘要：
The phase formation and electrical properties of (SrxBa1-x)Bi2Ta2O9 (SBBT) thin films prepared by the metal-organic decomposition method on Pt/Ti/SiO2/Si substrates have been investigated. It was observed that the microstructure and electrical properties of SBBT thin films dramatically varied with the Ba content. While the remanent polarization and dielectric constant decreased with increasing Ba content in SBBT thin films, the insulating properties significantly improved. The SBBT films also exhibited good fatigue characteristics under bipolar stressing to 1010 cycles.
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页码：5469 / 5471
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