Compensation of nitrogen acceptor in ZnSe:N/ZnSe grown by MOCVD

被引：0
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作者：
Wang, J.
Miki, T.
Omino, A.
Park, K.S.
Isshiki, M.
机构：
[1] Inst. for Adv. Materials Processing, Tohoku Univ., 1-1 K., Sendai, Japan
[2] Ricoh Res. Inst. of Gen. Electronics, 5-10 Yokatakami, Kumanodo, T., Natori, Japan
[3] Japan Sci. and Technol. Corporation, Nagatsuda 4259, Midori-ru, 226-8502, Yokohama, Japan
来源：
Journal of Crystal Growth | 2000年 / 221卷 / 1-4期
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页码：393 / 397
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