Optical properties of Ag(AlxGa1-x)S2 epitaxial layers grown on GaAs(100) by multisource evaporation

被引：0
|
作者：
机构：
[1] Tsuboi, Nozomu
[2] Matsuda, Shigeru
[3] 2,Kurasawa, Masaki
[4] Kobayashi, Satoshi
[5] Kaneko, Futao
来源：
Tsuboi, Nozomu | 2000年 / JJAP, Tokyo卷 / 39期
关键词：
D O I：
10.1143/jjap.39.5243
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] TEMPERATURE-DEPENDENT ALUMINUM INCORPORATION IN ALXGA1-X AS LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    VANSARK, WGJHM
    JANSSEN, GJHM
    DECROON, MHJM
    TANG, X
    GILING, LJ
    BIK, WMA
    DUNSELMAN, CPM
    HABRAKEN, FHPM
    VANDERWEG, WF
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) : 195 - 199
  • [42] OPTICAL-PROPERTIES OF (ALXGA1-X)(0.5)IN0.5P QUATERNARY ALLOYS
    KATO, H
    ADACHI, S
    NAKANISHI, H
    OHTSUKA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A): : 186 - 192
  • [43] STRUCTURAL-PROPERTIES OF (GAAS)1-X(SI2)X LAYERS ON GAAS(100) SUBSTRATES GROWN BY MIGRATION-ENHANCED EPITAXY
    RAO, TS
    NOZAWA, K
    HORIKOSHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (4A): : L547 - L550
  • [44] Effects of residual strain on optical and structural properties of ZnS epitaxial layers grown on GaAs substrates
    Nakamura, S
    Sasaki, C
    Sakashita, T
    Yamada, Y
    Taguchi, T
    Yokogawa, T
    BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 270 - 273
  • [45] CZOCHRALSKI GROWN (AlxGa1-x)2O3 CRYSTALS WITH VARIABLE Al CONTENT
    Butenko, P. N.
    Panov, D., I
    Kremleva, A., V
    Zakgeim, D. A.
    Nashchekin, A., V
    Smirnova, I. G.
    Bauman, D. A.
    Romanov, A. E.
    Bougrov, V. E.
    MATERIALS PHYSICS AND MECHANICS, 2019, 42 (06): : 802 - 807
  • [46] SELECTIVE GAAS/ALXGA1-X AS REACTIVE ION ETCHING USING CCL2F2
    KNOEDLER, CM
    KUECH, TF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (05): : 1233 - 1236
  • [47] Low Resistance Ohmic Contact on Epitaxial MOVPE Grown β-Ga2O3 and β-(AlxGa1-x)2O3 Films
    Alema, Fikadu
    Peterson, Carl
    Bhattacharyya, Arkka
    Roy, Saurav
    Krishnamoorthy, Sriram
    Osinsky, Andrei
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (10) : 1649 - 1652
  • [48] Structural and optical properties of InSb epitaxial films grown on GaAs(100) substrates at low temperature
    Kim, TW
    Bae, HC
    Park, HL
    APPLIED PHYSICS LETTERS, 1999, 74 (03) : 380 - 382
  • [49] Structural and optical properties of InSb epitaxial films grown on GaAs(100) substrates at low temperature
    Kwangwoon Univ, Seoul, Korea, Republic of
    Appl Phys Lett, 3 (380-382):
  • [50] Effect of substrate temperature on the structural and the optical properties of CdTe(100) epitaxial films grown on GaAs(100) substrates
    Lee, D. U.
    Jung, J. H.
    Kim, T. W.
    Lee, H. S.
    Park, H. L.
    Lee, K. H.
    SURFACE REVIEW AND LETTERS, 2007, 14 (04) : 755 - 759
12345