共 50 条
- [21] Electrical properties and mechanisms of the point defect formation in PbTe(In) films prepared by modified "hot wall" technique FUNCTIONAL MATERIALS, 2011, 18 (01): : 29 - 36
- [22] Hot wall beam epitaxial growth of PbTe layers on BaF2/CaF2/Si(111) substrates 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, 2000, : 143 - 146
- [23] Growth of heteroepitaxial AgInSe2 layers on Si (100) substrates by hot wall method OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2010, 4 (05): : 657 - 661
- [27] Growth of epitaxial MnSb layers on Si substrates by hot-wall epitaxy Applied Surface Science, 1997, 113-114 : 48 - 52
- [28] Epitaxial growth of hexagonal GaN films on SiC/Si substrates by hot-mesh CVD method AICAM 2005, 2006, 11-12 : 261 - +
- [29] GROWTH OF CRYSTALLINE GAAS FILMS ON SI SUBSTRATES BY GA AND AS ION-BEAMS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 862 - 865
- [30] Growth of MnSb thin films on CdTe substrates by hot-wall epitaxy Jpn J Appl Phys Part 2 Letter, 5 B (L607-L610):