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- [42] Dependence of the width of a δ-impurity layer on position in an InxGa1-xAs/GaAs strained quantum well Physica Status Solidi (A) Applied Research, 1991, 126 (02):
- [44] TIME-RESOLVED PHOTOLUMINESCENCE FROM INXGA1-XAS/GAAS SINGLE QUANTUM WELL CHINESE PHYSICS LETTERS, 1989, 6 (12): : 559 - 562
- [45] Spin Blockade and Magnetoresistance in Double Quantum Well Diode with Inverted Electric Field 2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
- [46] THE STUDY OF MISFIT DISLOCATIONS IN INXGA1-XAS/GAAS STRAINED QUANTUM-WELL STRUCTURES PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1992, 65 (04): : 829 - 839
- [47] CALCULATION OF THE EXCITON PARAMETERS IN STRESSED QUANTUM-WELL INXGA1-XAS/GAAS STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (10): : 1074 - 1077