Transferring-free top-gated graphene transistors fabricated on graphene films directly grown on sapphire substrates

被引：0

作者：

Hwai S. ^{[1
]}

Wu C.-H. ^{[1
]}

Wu C.-R. ^{[2
]}

Liao K.-C. ^{[2
]}

Lin S.-Y. ^{[2
]}

机构：

[1] Graduate Institute of Electronics Engineering, National Taiwan University, Taipei

[2] Research Center for Applied Science, Academia Sinica, Nankang, Taipei

来源：

| 1600年 / E-Flow PDF Chinese Institute of Electrical Engineering卷 / 23期

关键词：

2-D crystals; Graphene transistors;

D O I：

10.6329/CIEE.2016.5.03

中图分类号：

学科分类号：

摘要：

Transferring-free top-gated graphene transistors are demonstrated by using directly grown graphene on sapphire substrates. The improved field-effect mobility value 138 cm2V-1s-1 compared with back-gated transistors suggests that without the film transferring procedure, the device performances can be greatly enhanced. The results have demonstrated the potential of directly grown graphene for transferring-free graphene device fabrications.

引用

页码：181 / 186

页数：5

共 40 条

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