Transferring-free top-gated graphene transistors fabricated on graphene films directly grown on sapphire substrates

被引：0
|
作者：
Hwai S. [1 ]
Wu C.-H. [1 ]
Wu C.-R. [2 ]
Liao K.-C. [2 ]
Lin S.-Y. [2 ]
机构：
[1] Graduate Institute of Electronics Engineering, National Taiwan University, Taipei
[2] Research Center for Applied Science, Academia Sinica, Nankang, Taipei
来源：
| 1600年 / E-Flow PDF Chinese Institute of Electrical Engineering卷 / 23期
关键词：
2-D crystals; Graphene transistors;
D O I：
10.6329/CIEE.2016.5.03
中图分类号：
学科分类号：
摘要：
Transferring-free top-gated graphene transistors are demonstrated by using directly grown graphene on sapphire substrates. The improved field-effect mobility value 138 cm2V-1s-1 compared with back-gated transistors suggests that without the film transferring procedure, the device performances can be greatly enhanced. The results have demonstrated the potential of directly grown graphene for transferring-free graphene device fabrications.
引用
收藏
页码：181 / 186
页数：5
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