Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition

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Romano, L.T.
Van de Walle, C.G.
Ager, J.W. III
Gotz, W.
Kern, R.S.
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| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 87期
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