Characterization of plasma-induced damage of selectively recessed GaN/InAlN/AlN/GaN heterostructures using SiCl4 and SF6

被引：0

作者：

Ostermaier, Clemens ^{[1
]}

Pozzovivo, Gianmauro ^{[1
]}

Basnar, Bernhard ^{[1
]}

Schrenk, Werner ^{[1
]}

Carlin, Jean-François ^{[2
]}

Gonschorek, Marcus ^{[2
]}

Grandjean, Nicolas ^{[2
]}

Vincze, Andrej ^{[3
]}

Tóth, Lajos ^{[4
]}

Pécz, Bela ^{[4
]}

Strasser, Gottfried ^{[1
]}

Pogany, Dionyz ^{[1
]}

Kuzmik, Jan ^{[1
,5
]}

机构：

[1] Institute of Solid State Electronics, Center for Micro and Nanostructures, Vienna University of Technology, A-1040 Vienna, Austria

[2] Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

[3] International Laser Centre, Ilkovicova 3, 841 04 Bratislava, Slovakia

[4] Research Institute for Technical Physics and Material Science, H-1525 Budapest, Hungary

[5] Institute of Electrical Engineering, Slovac Academy of Sciences, 841 04 Bratislava, Slovakia

来源：

Japanese Journal of Applied Physics | 2010年 / 49卷 / 11期

关键词：

701.1 Electricity: Basic Concepts and Phenomena - 712.1 Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 804.2 Inorganic Compounds - 932.3 Plasma Physics;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 27 条

[1] Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6
Ostermaier, Clemens
Pozzovivo, Gianmauro
Basnar, Bernhard
Schrenk, Werner
Carlin, Jean-Francois
Gonschorek, Marcus
Grandjean, Nicolas
Vincze, Andrej
Toth, Lajos
Pecz, Bela
Strasser, Gottfried
Pogany, Dionyz
Kuzmik, Jan
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (11)
[2] Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe
Green, R. T.
Luxmoore, J.
Lee, K. B.
Houston, P. A.
Ranalli, F.
Wang, T.
Parbrook, P. J.
Uren, M. J.
Wallis, D. J.
Martin, T.
JOURNAL OF APPLIED PHYSICS, 2010, 108 (01)
[3] GaN reactive ion etching using SiCl4:Ar:SF6 chemistry
Sillero, E
Calle, F
Sánchez-García, MA
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2005, 16 (07) : 409 - 413
[4] GaN reactive ion etching using SiCl4:Ar:SF6 chemistry
E. Sillero
F. Calle
M. A. Sánchez-García
Journal of Materials Science: Materials in Electronics, 2005, 16 : 409 - 413
[5] Effect of the addition of SF6 and N2 in inductively coupled SiCl4 plasma for GaN etching
Oubensaid, E. H.
Duluard, C. Y.
Pichon, L. E.
Pereira, J.
Boufnichel, M.
Lefaucheux, P.
Dussart, R.
Ranson, P.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (07)
[6] Plasma-induced damage in doped InGaN/GaN heterostructures
Franz, G
Averbeck, R
COMPOUND SEMICONDUCTORS 1999, 2000, (166): : 479 - 482
[7] Analysis of GaN damage induced by Cl2/SiCl4/Ar plasma
Semiconductor Technology Development Division, Core Device Development Group, R and D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
不详
不详
Jpn. J. Appl. Phys., 8 PART 2
[8] Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma
Minami, Masaki
Tomiya, Shigetaka
Ishikawa, Kenji
Matsumoto, Ryosuke
Chen, Shang
Fukasawa, Masanaga
Uesawa, Fumikatsu
Sekine, Makoto
Hori, Masaru
Tatsumi, Tetsuya
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (08)
[9] C-V characterization of SF6 plasma treated AlGaN/GaN heterostructures
Osvald, J.
Lalinsky, T.
Vanko, G.
Hascik, S.
Vincze, A.
MICROELECTRONIC ENGINEERING, 2010, 87 (11) : 2208 - 2210
[10] GaN LEDs fabricated using SF6 plasma RIE
Khan, Wasif
Bi, Xiaopeng
Fan, Bin
Li, Wen
MICRO & NANO LETTERS, 2018, 13 (09): : 1255 - 1259

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