GaN reactive ion etching using SiCl4:Ar:SF6 chemistry

被引：5

作者：

Sillero, E ^{[1
]}

Calle, F ^{[1
]}

Sánchez-García, MA ^{[1
]}

机构：

[1] Univ Politecn Madrid, ETSI Telecomun, ISOM DIE, E-28040 Madrid, Spain

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2005年 / 16卷 / 07期

关键词：

D O I：

10.1007/s10854-005-2306-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reactive ion etching with SiCl4:Ar:SF6 mixtures of gallium nitride epitaxial layers grown by metal organic chemical vapour deposition (MOCVD) has been studied. The effects of several factors such as gas mixture, chamber pressure, and drive power on the etch rate and etched profile have been investigated. A strong dependence of both properties with the amount of SF6 present in the mixture has been found. High etch rates (> 50 nm/min) and controllable sidewall angles and smoothness have been achieved. (C) 2005 Springer Science + Business Media, Inc.

引用

页码：409 / 413

页数：5

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