Effect of cooling process after GaN epitaxial growth by radio-frequency molecular beam epitaxy

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作者：
Kubo, Shuichi [1 ]
Kurai, Satoshi [1 ]
Taguchi, Tsunemasa [1 ]
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[1] Dept. of Elec. and Electronic Eng., Faculty of Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
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| 1600年 / Japan Society of Applied Physics卷 / 40期
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