Effect of cooling process after GaN epitaxial growth by radio-frequency molecular beam epitaxy

被引：0
|
作者：
Kubo, Shuichi [1 ]
Kurai, Satoshi [1 ]
Taguchi, Tsunemasa [1 ]
机构：
[1] Dept. of Elec. and Electronic Eng., Faculty of Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
来源：
| 1600年 / Japan Society of Applied Physics卷 / 40期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Effect of cooling process after GaN epitaxial growth by radio-frequency molecular beam epitaxy
    Kubo, S
    Kurai, S
    Taguchi, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (12A): : L1297 - L1300
  • [2] Epitaxial growth and characterization of GaN Films on (001) GaAs substrates by radio-frequency molecular beam epitaxy
    Liu, HF
    Chen, H
    Wan, L
    Li, ZQ
    Huang, Q
    Zhou, JM
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 390 - 394
  • [3] Pre-treatment of GaN template for homoepitaxial growth by radio-frequency molecular beam epitaxy
    Kubo, S
    Nanba, Y
    Okazaki, T
    Manabe, S
    Kurai, S
    Taguchi, T
    JOURNAL OF CRYSTAL GROWTH, 2002, 236 (1-3) : 66 - 70
  • [4] Radio-frequency plasma-excited molecular beam epitaxy growth of GaN on graphene/Si(100) substrates
    Araki, Tsutomu
    Uchimura, Satoru
    Sakaguchi, Junichi
    Nanishi, Yasushi
    Fujishima, Tatsuya
    Hsu, Allen
    Kim, Ki Kang
    Palacios, Tomas
    Pesquera, Amaia
    Centeno, Alba
    Zurutuza, Amaia
    APPLIED PHYSICS EXPRESS, 2014, 7 (07)
  • [5] Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy
    李新化
    钟飞
    邱凯
    尹志军
    姬长建
    Chinese Physics B, 2008, 17 (04) : 1360 - 1363
  • [6] Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy
    Li Xin-Hua
    Zhong Fei
    Qiu Kai
    Yin Zhi-Jun
    Ji Chang-Jian
    CHINESE PHYSICS B, 2008, 17 (04) : 1360 - 1363
  • [7] Substrate Terrace Width Dependence of Direct Growth of GaN on ScAlMgO4 by Radio-Frequency Molecular Beam Epitaxy
    Wada, Yuichi
    Deura, Momoko
    Kuroda, Yuya
    Goto, Naoki
    Kayamoto, Seiya
    Fujii, Takashi
    Mouri, Shinichiro
    Araki, Tsutomu
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2023, 260 (07):
  • [8] Growth Mechanism of InN Nucleation Layers on Epitaxial Graphene Using Metal Organic Vapor Phase Epitaxy and Radio-Frequency Molecular Beam Epitaxy
    Bhuiyan, Ashraful G.
    Ishimaru, Daiki
    Hashimoto, Akihiro
    CRYSTAL GROWTH & DESIGN, 2020, 20 (03) : 1415 - 1421
  • [9] Radio-frequency molecular-beam-epitaxy growth of III nitrides for microsensor applications
    Starikov, D
    Boney, C
    Berishev, I
    Hernandez, IC
    Bensaoula, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04): : 1404 - 1408
  • [10] Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
    Sui Yan-Ping
    Yu Guang-Hui
    CHINESE PHYSICS LETTERS, 2011, 28 (06)
12345