Thermal desorption behavior of AlF3 formed on Al 2O3

被引:0
|
作者
Watanabe, Morimichi [1 ]
Iida, Takashi [2 ]
Akiyama, Keijiro [2 ]
Ishikawa, Takahiro [1 ]
Sakai, Hiroaki [1 ]
Sawabe, Kyoichi [2 ]
Shobatake, Kosuke [2 ]
机构
[1] Materials Research Laboratory, NGK Insulators, Ltd., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan
[2] Department of Molecular Design, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603, Japan
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Desorption - Mass spectrometry - Molecular beams - Sublimation;
D O I
10.1143/jjap.42.l680
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摘要
Thermal desorption behaviors of the AlF3 layer formed on A1 2O3 in the sample temperature range from TS = 300 to 930 K have been studied using molecular beam mass spectrometry combined with a time-of-flight (TOF) technique. Fluorine atoms were detected as the desorbed species at sample temperatures of Ts = 625 to 850 K and the intensity was found to be peaked at Ts = 750 K. AlF2 species whose translational temperature Ttr is approximately 100 K lower than TS were also detected as desorbed species above T s = 850 K and the intensity increased exponentially as Ts was raised. Based on these results, the desorption behavior of AlF3 species is discussed.
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