Analysis of microstructures in SiGe buffer layers on silicon-on-insulator substrates

被引：0

作者：

Taoka, Noriyuki ^{[1
]}

Sakai, Akira ^{[1
]}

Mochizuki, Shogo ^{[1
]}

Nakatsuka, Osamu ^{[2
]}

Ogawa, Masaki ^{[3
]}

Zaima, Shigeaki ^{[1
]}

Tezuka, Tsutomu ^{[4
]}

Sugiyama, Naoharu ^{[4
]}

Takagi, Shin-Ichi ^{[4
,5
]}

机构：

[1] Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

[2] EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

[3] Center for Cooperative Research in Advanced Science and Technology, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

[4] MIRAI Project, Association of Super-Advanced Electronics Technology, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

[5] Graduate School of Frontier Sciences, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

来源：

Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 10卷 / 7356-7363期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Dislocations (crystals) - Morphology - Silicon compounds - Strain rate - Transmission electron microscopy - X ray diffraction analysis

引用

共 50 条

[1] Analysis of microstructures in SiGe buffer layers on silicon-on-insulator substrates
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Tezuka, T
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