15 kV SiC MOSFET: An enabling technology for medium voltage solid state transformers

被引：128
|
作者：
机构：
[1] Huang, Alex Q.
[2] Zhu, Qianlai
[3] Wang, Li
[4] Zhang, Liqi
来源：
Huang, Alex Q. (aqhuang@ncsu.edu) | 1600年 / China Power Supply Society卷 / 02期
关键词：
Enabling technologies - High switching frequencies - Higher efficiency - Power conversion - Silicon carbides (SiC) - Smart grid applications - Solid state transformer (SST) - Thermal Performance;
D O I：
10.24295/CPSSTPEA.2017.00012
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Testing and Validation of 10 kV SiC MOSFET Based 35 kVA MMC Phase-leg for Medium Voltage (13.8 kV) Grid
    Palmer, James
    Ji, Shiqi
    Huang, Xingxuan
    Zhang, Li
    Giewont, William
    Wang, Fred
    Tolbert, Leon M.
    2019 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2019, : 2001 - 2006
  • [42] A Study on High Frequency Transformer Design in Medium-voltage Solid-state Transformers
    Yeh, Chih-Shen
    Lai, Jih-Sheng
    2018 ASIAN CONFERENCE ON ENERGY, POWER AND TRANSPORTATION ELECTRIFICATION (ACEPT), 2018,
  • [43] Embedded Gate Driver Transformers for use with Medium Voltage SiC MOSFETS
    Quilici, Jim
    Lu, Ping
    2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, 2024, : 881 - 883
  • [44] Medium Voltage Power Converter Design and Demonstration Using 15 kV SiC N-IGBTs
    Kadavelugu, Arun
    Mainali, Krishna
    Patel, Dhaval
    Madhusoodhanan, Sachin
    Tripathi, Awneesh
    Hatua, Kamalesh
    Bhattacharya, Subhashish
    Ryu, Sei-Hyung
    Grider, David
    Leslie, Scott
    2015 THIRTIETH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2015), 2015, : 1396 - 1403
  • [45] Design Considerations of High-Voltage-Insulated Gate Drive Power Supply for 10 kV SiC MOSFET in Medium-Voltage Application
    Zhang, Li
    Ji, Shiqi
    Gu, Shida
    Huang, Xingxuan
    Palmer, James
    Giewont, William
    Wang, Fred
    Tolbert, Leon M.
    THIRTY-FOURTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2019), 2019, : 425 - 430
  • [46] Voltage Overshoot Suppression for SiC MOSFET-Based DC Solid-State Circuit Breaker
    Liao, Xinglin
    Li, Hui
    Yao, Ran
    Huang, Zhangjian
    Wang, Kun
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2019, 9 (04): : 649 - 660
  • [47] 15 kV/10 A SiC功率MOSFET器件设计及制备
    李士颜
    杨晓磊
    黄润华
    汤伟
    赵志飞
    柏松
    固体电子学研究与进展, 2021, 41 (02) : 93 - 97
  • [48] Design of a Gate-Driving Cell for Enabling Extended SiC MOSFET Voltage Blocking
    Issa, Walid
    Gonzalez, Jose Ortiz
    Alatise, Olayiwola
    ENERGIES, 2022, 15 (20)
  • [49] Characterization of High-Voltage-SiC-Devices with 15 kV Blocking Voltage
    Thoma, Juergen
    Kolb, Sven
    Salzmann, Christopher
    Kranzer, Dirk
    2016 IEEE INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (PEMC), 2016, : 946 - 951
  • [50] A Medium-Voltage Hybrid DC Circuit Breaker, Part I: Solid-State Main Breaker Based on 15 kV SiC Emitter Turn-OFF Thyristor
    Song, Xiaoqing
    Peng, Chang
    Huang, Alex Q.
    IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2017, 5 (01) : 278 - 288
12345