Temperature dependence of exchange field and coercivity in polycrystalline NiO/NiFe film with thin antiferromagnetic layer: Role of antiferromagnet grain size distribution

被引:0
|
作者
机构
来源
| 1600年 / Am Inst Phys, Woodbury, NY, USA卷 / 87期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 39 条
  • [21] Influence of the antiferromagnetic grain volume distribution on exchange-bias in polycrystalline thin films: An X-ray diffractometry study
    Meyl, Markus
    Ehresmann, Arno
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2020, 495
  • [22] Dynamic recrystallization of wet synthetic polycrystalline halite: dependence of grain size distribution on flow stress, temperature and strain
    Ter Heege, JH
    De Bresser, JHP
    Spiers, CJ
    TECTONOPHYSICS, 2005, 396 (1-2) : 35 - 57
  • [23] Temperature dependence improvement of polycrystalline-silicon tunnel field-effect thin-film transistor
    Ma, William Cheng-Yu
    Wang, Jia-Yi
    Yu, Li-Wei
    Wang, Hsiao-Chun
    Huang, Yan-Jia
    SOLID-STATE ELECTRONICS, 2019, 160
  • [24] Time-dependent rotatable magnetic anisotropy in polycrystalline exchange-bias systems: Dependence on grain-size distribution
    Mueglich, Nicolas David
    Gaul, Alexander
    Meyl, Markus
    Ehresmann, Arno
    Goetz, Gerhard
    Reiss, Guenter
    Kuschel, Timo
    PHYSICAL REVIEW B, 2016, 94 (18)
  • [25] Effects of Al grain size on metal -induced layer exchange growth of amorphous Ge thin film on glass substrate
    Nakata, Mitsuki
    Toko, Kaoru
    Suemasu, Takashi
    THIN SOLID FILMS, 2017, 626 : 190 - 193
  • [26] FILM THICKNESS AND GRAIN-SIZE DIAMETER DEPENDENCE ON TEMPERATURE-COEFFICIENT OF RESISTANCE OF THIN METAL-FILMS
    SINGH, A
    JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1908 - 1909
  • [27] Role of particle size distribution on the temperature dependence of coercive field in sputtered Co/Cu granular films
    Vavassori, P
    Angeli, E
    Bisero, D
    Spizzo, F
    Ronconi, F
    APPLIED PHYSICS LETTERS, 2001, 79 (14) : 2225 - 2227
  • [28] Influences of grain boundaries on temperature dependence of device characteristics and on hot carrier effects in low-temperature polycrystalline silicon thin film transistors containing large grains
    Tsuchiya, Toshiaki
    Miura, Takafumi
    Yamai, Tsubasa
    Kawachi, Genshiro
    Matsumura, Masakiyo
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (3B): : 1312 - 1317
  • [30] Effect of buffer layer on antiferromagnetic grain size and exchange-coupling field of Cr70Al30/Fe19Ni81 bilayers
    Ikarashi, K
    Otani, Y
    Fukamichi, K
    Kitakami, O
    Shimada, Y
    Echigoya, J
    Uyama, H
    Makino, A
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) : 7213 - 7215