Study of pressure balance for press-pack IGBTs and its influence on temperature distribution

被引：3
|
作者：
Zhao Z. [1 ,2 ]
Liang L. [1 ]
Han L. [1 ]
机构：
[1] State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan
[2] School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan
来源：
Chinese Journal of Electrical Engineering | 2018年 / 4卷 / 04期
关键词：
Press-Pack IGBT; Pressure balance; Temperature distribution; Thermal resistance;
D O I：
10.23919/CJEE.2018.8606790
中图分类号：
学科分类号：
摘要：
Pressure balance is a key technology for Press-Pack IGBT packaging, and is studied in this paper with its influence on the temperature distribution discussed in further when the device is turned on. By establishing the physical model of the Press-Pack IGBT device in the finite element simulation software, the influence of the internal flatness condition on the pressure balance is analyzed, and the variation of the average pressure difference with the flatness in different parallel scale of the chips is obtained. The thermal contact resistance and the electrical contact resistance parameters, which are dependent on the pressure, are then imported to perform the multi-field coupling, further investigating the effect of different pressure distributions on temperature distribution. The junction-case thermal resistance of the device with different flatness is compared experimentally. The results have demonstrated the influence of the flatness on the thermal resistance of the Press-Pack IGBT device. © 2018 IEEE. All rights reserved.
引用
收藏
页码：57 / 63
页数：6
相关论文
共 50 条
  • [21] Wear-Out Mechanism of Press-Pack IGBTs Under Accelerated Aging Test
    Zhan, Cao
    Zhu, Lingyu
    Dai, Jiangang
    Zhang, Yaxin
    Liu, Junjie
    Liu, Zhanlei
    Liu, Chenshuo
    Ji, Shengchang
    IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2022, 10 (05) : 5132 - 5141
  • [22] One-dimensional Field Method for Temperature and Pressure of Press-pack IGBT Devices
    Fan S.
    Zhao Z.
    Ni C.
    Cui X.
    Li J.
    Zhao, Zhibin (zhibinzhao@126.com), 2018, Chinese Society for Electrical Engineering (38): : 215 - 223
  • [23] Comparison of 4.5-kV Press-Pack IGBTs and IGCTs for Medium-Voltage Converters
    Filsecker, Felipe
    Alvarez, Rodrigo
    Bernet, Steffen
    IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2013, 60 (02) : 440 - 449
  • [24] Investigation on Saturation Voltage Increment of Multichip Press-Pack IGBTs Under Power Cycling Tests
    Zhan, Cao
    Zhu, Lingyu
    Zhang, Yaxin
    Ji, Shengchang
    Iannuzzo, Francesco
    Blaabjerg, Frede
    IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2024, 71 (11) : 15012 - 15023
  • [25] Simulation and Analysis of Power Cycle Stress Characteristics of Press-pack IGBTs Based on Multiphysics Coupling
    Lu, Yujia
    Jiao, Chaoqun
    Chen, Rui
    Yuan, Wenqian
    Zhang, Xiumin
    Gaodianya Jishu/High Voltage Engineering, 2024, 50 (09): : 4195 - 4206
  • [26] An Alternative Junction-to-Case Thermal Resistance Test Method for High Power Press-Pack IGBTs
    Sun, Hongyu
    Sun, Yuan
    Deng, Erping
    Zhao, Yushan
    Li, Weibang
    Pan, Maoyang
    Liu, Peng
    Yan, Yuxing
    Huang, Yongzhang
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2024, 39 (12) : 15644 - 15654
  • [27] Reliability Study and Modelling of IGBT Press-Pack Power Modules
    Long, Hong Y.
    Sweet, Mark R.
    Narayanan, E. M. S.
    Li, Gangru
    2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2017, : 2711 - 2717
  • [28] Maximum Chip Temperature Direct Monitoring for Press-Pack IGBT Integrating Temperature Sensors
    Zhang, Ziyang
    Liang, Lin
    Wang, Li
    Zhang, Zhiyuan
    Wen, Kaijun
    Tu, Liuyu
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2025, 40 (06) : 8049 - 8061
  • [29] Dynamic thermal modelling and analysis of press-pack IGBTs both at component-level and chip-level
    Busca, Cristian
    Teodorescu, Remus
    Blaabjerg, Frede
    Helle, Lars
    Abeyasekera, Tusitha
    39TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY (IECON 2013), 2013, : 677 - 682
  • [30] Thermal Network Parameter Extracting Method for Press-Pack IGBT Junction Temperature
    Fan, Siyuan
    Zhao, Zhibin
    Ni, Chouwei
    Cui, Xiang
    Li, Jinyuan
    2018 IEEE INTERNATIONAL POWER ELECTRONICS AND APPLICATION CONFERENCE AND EXPOSITION (PEAC), 2018, : 881 - 884
12345