Enhanced light output in InGaN-based light-emitting diodes with omnidirectional one-dimensional photonic crystals

被引：0

作者：

Lin, Chung-Hsiang ^{[1
,2
]}

Tsai, Jui-Yen ^{[2
]}

Kao, Chih-Chiang ^{[1
]}

Kuo, Hao-Chung ^{[1
]}

Yu, C.-C. ^{[2
]}

LoJun-Ren, J.-R. ^{[2
]}

Leung, Kok-Ming ^{[3
]}

机构：

[1] Department of Photonics, Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

[2] HighLink Technology Corporation, ChuNan 350, Taiwan

[3] Department of Computer and Information Science, Polytechnic University, Six Metrotech Center, Brooklyn, NY 11201, United States

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 3 A期

关键词：

We have successfully designed and fabricated GaN-based light-emitting diodes (LEDs) containing an omnidirectional one-dimensional photonic crystal (1D PC). The ID PC is composed of alternatively stacked TiO2 and SiO2 layers designed to possess a photonic band gap (PBG) within the blue regime of interest. With the same multiple quantum well (MQW) emission peak at approximately 450 nm and a driving current of 20 mA; the light output powers of the LED with and without the 1D PC are approximately 11.7 and 6.5 mW; respectively. The enhancement in light extraction of our LED with ID PC demonstrates that a properly designed omnidirectional ID PC can have a higher reflectance and a wider reflection angle than a conventional distributed Bragg reflector (DBR). Our work shows promising potential for the enhancement of output powers of commercial light emitting devices. © 2006 The Japan Society of Applied Physics;

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摘要：

Journal article (JA)

引用

页码：1591 / 1593

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