Properties analysis of silicon film deposited by PECVD after annealing

被引:0
|
作者
Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Material, College of Physics and Electronic Information, Inner Mongolia Normal University, Huhhot, China [1 ]
机构
来源
Rengong Jingti Xuebao | / 12卷 / 3145-3150期
关键词
22;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Interaction between water and fluorine-doped silicon oxide film deposited by PECVD
    Yoshimaru, M
    Koizumi, S
    Shimokawa, K
    Ida, J
    1997 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 35TH ANNUAL, 1997, : 234 - 241
  • [32] Effectiveness of PECVD deposited nano-silicon oxide protective layer for polylactic acid film: Barrier and surface properties
    Zhao, Yuan
    Huang, Chongxing
    Huang, Xingqiang
    Huang, Haohe
    Zhao, Hui
    Wang, Shuangfei
    Liu, Shijie
    FOOD PACKAGING AND SHELF LIFE, 2020, 25
  • [33] FABRICATION AND CHRARCTERIZATION SILICON THIN FILM SOLAR CELLS DEPOSITED BY HF-PECVD
    Lien, Shui-Yang
    Ou, Yu-Chih
    Cho, Yun-Shao
    Wang, Chao-Chun
    Chen, Chia-Fu
    Sun, Wen-Ching
    Wuu, Dong-Sing
    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, : 1545 - 1548
  • [34] Annealing effects on electrical and optical properties of a-Si:H layer deposited by PECVD
    Elghoul, N.
    Kraiem, S.
    Jemai, R.
    Zebentout, B.
    Khirouni, K.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 40 : 302 - 309
  • [35] NiO Nanostructured Honeycomb Realized by Annealing Ni Film Deposited on Silicon
    Zhang, Kaili
    Rossi, Carole
    Alphonse, Pierre
    Tenailleau, Christophe
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2008, 8 (11) : 5903 - 5907
  • [36] PECVD silicon carbide deposited at different temperature
    Huran, J.
    Zatko, B.
    Hotovy, I.
    Pezoldt, J.
    Kobzev, A. P.
    Balalykin, N. I.
    CZECHOSLOVAK JOURNAL OF PHYSICS, 2006, 56 : B1207 - B1211
  • [37] Investigation of optical properties of silicon oxynitride films deposited by RF PECVD method
    Kijaszek, Wojciech
    Oleszkiewicz, Waldemar
    Zakrzewski, Adrian
    Patela, Sergiusz
    Tlaczala, Marek
    MATERIALS SCIENCE-POLAND, 2016, 34 (04): : 868 - 871
  • [38] Optical and Electrical Properties of Hydrogenated Silicon Oxide Thin Films Deposited by PECVD
    Shen Hualong
    Wang Hui
    Yan Hui
    Zhang Ming
    Pan Qingtao
    Jia Haijun
    Mai Yaohua
    JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION, 2014, 29 (05): : 900 - 905
  • [39] Optical and electrical properties of hydrogenated silicon oxide thin films deposited by PECVD
    Hualong Shen
    Hui Wang
    Hui Yan
    Ming Zhang
    Qingtao Pan
    Haijun Jia
    Yaohua Mai
    Journal of Wuhan University of Technology-Mater. Sci. Ed., 2014, 29 : 900 - 905
  • [40] Structural and optical properties of polycrystalline silicon thin films deposited by PECVD method
    Zhu, FR
    Kohara, H
    Fuyuki, T
    Matsunami, H
    CONFERENCE RECORD OF THE TWENTY FIFTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1996, 1996, : 709 - 712