Wafer-bonded 850-nm vertical-cavity surface-emitting lasers on Si substrate with metal mirror

被引：0
|
作者：
Horng, Ray-Hua [1 ,2 ]
Wuu, Dong-Sing [1 ]
机构：
[1] Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan
[2] Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 09期
关键词：
Vertical-cavity surface-emitting lasers (VCSEL);
D O I：
10.1143/jjap.41.5849
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：5849 / 5852
相关论文
共 50 条
  • [31] 12.5-Gbps operation of 850-nm vertical-cavity surface-emitting lasers with reduced parasitic capacitance by BCB planarization technique
    Tanigawa, Tatsuya
    Onishi, Toshikazu
    Nagai, Shuichi
    Ueda, Tetsuzo
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2006, 42 (7-8) : 785 - 790
  • [32] High-speed modulation of 850-nm intracavity contacted shallow implant-apertured vertical-cavity surface-emitting lasers
    Dang, G
    Hobson, WS
    Chirovsky, LMF
    Lopata, J
    Tayahi, M
    Chu, SNG
    Ren, F
    Pearton, SJ
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (09) : 924 - 926
  • [33] Wafer-bonded bottom-emitting 850-nm VCSEL's on GaP substrates
    Lin, CK
    Ryu, SW
    Choi, WJ
    Dapkus, PD
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (08) : 937 - 939
  • [34] High-speed 850 nm vertical-cavity surface-emitting lasers with BCB planarization technique
    He Xiao-ying
    Dong Jian
    Hu Shuai
    He Yan
    Lv Ben-shun
    Luan Xin-xin
    Li Chong
    Hu Zong-hai
    Guo Xia
    CHINESE OPTICS, 2018, 11 (02): : 190 - 197
  • [35] High-speed 850 nm Vertical-cavity Surface-emitting Lasers with Multilayer Oxide Aperture
    Tong, Haixia
    Wei, Zhipeng
    Tong, Cunzhu
    Wang, Yanjing
    Meng, Bo
    Wang, Lijun
    2022 IEEE 14TH INTERNATIONAL CONFERENCE ON ADVANCED INFOCOMM TECHNOLOGY (ICAIT 2022), 2022, : 216 - 219
  • [36] DC and AC characteristics of 850 nm broad-area vertical-cavity surface-emitting lasers
    Yang, HPD
    Su, YS
    Jiang, WC
    Wang, ML
    Yu, SJ
    Sung, CP
    OPTOELECTRONIC MATERIALS AND DEVICES II, 2000, 4078 : 611 - 619
  • [37] Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers
    Huang, CY
    Wu, MC
    Yu, HC
    Jiang, WJ
    Wang, JM
    Sung, CP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (04): : 1970 - 1973
  • [38] Efficiency and spectral characteristics of 850 nm oxide-confined vertical-cavity surface-emitting lasers
    Alias, Mohd Sharizal
    Leisher, Paul O.
    Choquette, Kent D.
    Anuar, Khairul
    Siriani, Dominic
    Mitani, Sufian
    Razman Y., Mohd
    Fatah A. M., Abdul
    2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2006, : 231 - +
  • [39] Ultimate modulation bandwidth of 850 nm oxide-confined vertical-cavity surface-emitting lasers
    Bobrov, M. A.
    Blokhin, S. A.
    Maleev, N. A.
    Kuzmenkov, A. G.
    Blokhin, A. A.
    Zadiranov, Yu M.
    Troshkov, S. I.
    Ledentsov, N. N.
    Ustinov, V. M.
    2ND INTERNATIONAL SCHOOL AND CONFERENCE SAINT-PETERSBURG OPEN ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SPBOPEN2015), 2015, 643
  • [40] Optimized design and epitaxy growth of high speed 850 nm vertical-cavity surface-emitting lasers
    Zhou Guang-Zheng
    Yao Shun
    Yu Hong-Yan
    Lu Zhao-Chen
    Wang Qing
    Zhou Tian-Bao
    Li Ying
    Lan Tian
    Xia Yu
    Lang Lu-Guang
    Cheng Li-Wen
    Dong Guo-Liang
    Kang Lian-Hong
    Wang Zhi-Yong
    ACTA PHYSICA SINICA, 2018, 67 (10)
12345