Effects of growth interruption on the properties of InGaN/GaN MQWs grown by MOCVD

被引：0
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作者：
Niu, Nan-Hui [1 ]
Wang, Huai-Bing [1 ]
Liu, Jian-Ping [1 ]
Liu, Nai-Xin [1 ]
Xing, Yan-Hui [1 ]
Han, Jun [1 ]
Deng, Jun [1 ]
Shen, Guang-Di [1 ]
机构：
[1] Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
来源：
Guangdianzi Jiguang/Journal of Optoelectronics Laser | 2007年 / 18卷 / 04期
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页码：422 / 424
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