Distribution of radiative impurity-defect centers in ZnSe: Al crystals studied by local spectral cathodoluminescence

被引：0
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作者：
Korotkov, V.A. [1 ]
Nazarov, M.V. [1 ]
Sobolevskaya, R.L. [1 ]
Sushkevich, K.D. [1 ]
Bruk, L.I. [1 ]
Petrov, V.I. [2 ]
机构：
[1] Moldova State University, Chisinau, Moldova
[2] Department of Physics, M. V. Lomonosov Moscow Stt. Univ., Moscow, Russia
来源：
Surface Investigation X-Ray, Synchrotron and Neutron Techniques | 2001年 / 16卷 / 12期
关键词：
Aluminum - Annealing - Cathodoluminescence - Crystal impurities - Dislocations (crystals) - Single crystals;
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摘要：
A study was performed on distribution of radiative impurity-defect centers in ZnSe. The distribution of radiative impurity-defect states after annealing of ZnSe single crystal in the Bi or melt was studied by local cathodoluminescence. The counter flows of the Zn and Al atoms near the surface and in the bulk showed to form radiative centers in the form of neutral and negative association pairs of the (VZnAlZn) type.
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页码：1907 / 1917
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