LOCAL-DISTRIBUTION OF DEEP CENTERS IN GAP STUDIED BY INFRARED CATHODOLUMINESCENCE

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作者：
DOMINGUEZADAME, F
PIQUERAS, J
FERNANDEZ, P
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来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 03期
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O59 [应用物理学];
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摘要：
Near-infrared cathodoluminescence (CL) in the scanning electron microscope has been used to characterize GaP:S. Spectra of as-grown crystals show a broadband at about 1240 nm, probably related to P(Ga) antisite defects. This emission has been found to be higher at dislocations giving a CL image opposite to the visible CL image.
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页码：257 / 259
页数：3
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