Influence of boron and fluorine incorporation on the network structure of ultrathin SiO2

被引：0
|
作者：
Miyazaki, Seiichi [1 ]
Morino, Kohichi [1 ]
Hirose, Masataka [1 ]
机构：
[1] Dept. of Electrical Engineering, Hiroshima University, 1-4-1 Kagamiyama, Higashi, Hiroshima-shi 739-8527, Japan
来源：
Solid State Phenomena | 2000年 / 76-77卷
关键词：
Absorption bands - Depth profiling - Network structure - Structural relaxation - Thinning;
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摘要：
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页码：149 / 152
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