The Si1-xGex/Si(100) heterostructures obtained by sublimation molecular beam epitaxy of Si in GeH4

被引：0
|
作者：
Svetlov, S.P.
Shengurov, V.G.
Chalkov, V.Yu.
Krasil'nik, Z.F.
Andreev, B.A.
Drozdov, Yu.N.
机构：
来源：
Izvestiya Akademii Nauk. Ser. Fizicheskaya | 2001年 / 65卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：203 / 207
相关论文
共 50 条
  • [31] Photoluminescence lifetime and structure of molecular beam epitaxy porous Si1-xGex grown on Si
    Ünal, B
    Parkinson, M
    Bayliss, SC
    Naylor, T
    Schröder, D
    JOURNAL OF POROUS MATERIALS, 2000, 7 (1-3) : 143 - 146
  • [32] GE SEGREGATION AT SI/SI1-XGEX INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY
    ZALM, PC
    VANDEWALLE, GFA
    GRAVESTEIJN, DJ
    VANGORKUM, AA
    APPLIED PHYSICS LETTERS, 1989, 55 (24) : 2520 - 2522
  • [33] Photoluminescence lifetime and structure of molecular beam epitaxy porous Si1-xGex grown on Si
    Ünal, B.
    Parkinson, M.
    Bayliss, S.C.
    Naylor, T.
    Schröder, D.
    Journal of Porous Materials, 2000, 7 (01) : 143 - 146
  • [34] EPITAXY OF SI1-XGEX BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4
    CHEN, LP
    CHOU, TC
    TSAI, WC
    HUANG, GW
    TSENG, HC
    LIN, HC
    CHANG, CY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (7B): : L869 - L871
  • [35] Diffusion of phosphorus in relaxed Si1-xGex films and strained Si/Si1-xGex heterostructures
    Christensen, J.S. (jens@imit.kth.se), 1600, American Institute of Physics Inc. (94):
  • [36] Diffusion of phosphorus in relaxed Si1-xGex films and strained Si/Si1-xGex heterostructures
    Christensen, JS
    Radamson, HH
    Kuznetsov, AY
    Svensson, BG
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (10) : 6533 - 6540
  • [37] CHARACTERIZATION OF SI1-XGEX/SI (100) HETEROSTRUCTURES BY PHOTOLUMINESCENCE AND ADMITTANCE SPECTROSCOPY
    SOUIFI, A
    BREMOND, G
    BENYATTOU, T
    GUILLOT, G
    DUTARTRE, D
    BERBEZIER, I
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 2002 - 2007
  • [38] Simulation of the process of strain relaxation in Si1-xGex/Si(100) heterostructures
    Fischer, GG
    Zaumseil, P
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997, 164 (02): : 767 - 778
  • [39] Annealing Behavior of Si1-xGex/Si Heterostructures
    于卓
    李代宗
    成步文
    李成
    雷震霖
    黄昌俊
    张春辉
    余金中
    王启明
    梁骏吾
    半导体学报, 2000, (10) : 962 - 965
  • [40] Valley splitting in Si/Si1-xGex heterostructures
    Balasubramanian, S
    Venkataraman, V
    SOLID STATE COMMUNICATIONS, 1996, 100 (07) : 525 - 528
12345