The Si1-xGex/Si(100) heterostructures obtained by sublimation molecular beam epitaxy of Si in GeH4

被引:0
|
作者
Svetlov, S.P.
Shengurov, V.G.
Chalkov, V.Yu.
Krasil'nik, Z.F.
Andreev, B.A.
Drozdov, Yu.N.
机构
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:203 / 207
相关论文
共 50 条
  • [1] Si1-xGex/Si(100) heterostructures obtained by sublimation molecular beam epitaxi of Si in GeH4
    Svetlov, SP
    Shengurov, VG
    Chalkov, VJ
    Krasilnik, ZF
    Andreev, BA
    Drozdov, YN
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 2001, 65 (02): : 203 - 206
  • [2] Heteroepitaxy of Si1-xGex layers on Si(100) substrates from atomic Si and molecular GeH4 beams
    Tolomasov, VA
    Orlov, LK
    Svetlov, SP
    Rubtsova, RA
    Gudkova, AD
    Kornaukhov, AV
    Potapov, AV
    Drozdov, YN
    CRYSTALLOGRAPHY REPORTS, 1998, 43 (03) : 493 - 498
  • [3] Growth of epitaxial multilayer Si/Si1-xGex δ-doped structures using sublimation MBE of Si in GeH4
    Svetlov, S.P.
    Chalkov, V.Yu.
    Shengurov, V.G.
    Gavrilenko, V.I.
    Drozdov, M.N.
    Drozdov, Yu.N.
    Krasil'nik, Z.F.
    Izvestiya Akademii Nauk. Ser. Fizicheskaya, 2004, 68 (01): : 32 - 35
  • [4] Structural characterisation and stability of Si1-xGex/Si(100) heterostructures grown by molecular beam epitaxy
    Re, M
    Scalese, S
    Mirabella, S
    Terrasi, A
    Priolo, F
    Rimini, E
    Berti, M
    Coati, A
    Drigo, A
    Carnera, A
    De Salvador, D
    Spinella, C
    La Mantia, A
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 749 - 755
  • [5] Evaluation of compositional intermixing at interfaces in Si(Ge)/Si1-xGex heteroepitaxial structures grown by molecular beam epitaxy with combined sources of Si and GeH4
    Orlov, LK
    Ivina, NL
    Potapov, AV
    SEMICONDUCTORS, 2000, 34 (10) : 1103 - 1108
  • [6] Erbium and germanium profiles in Si1-xGex layers grown by silicon sublimation-source molecular-beam epitaxy in GeH4
    Shengurov, VG
    Svetlov, SP
    Chalkov, VY
    Andreev, BA
    Krasil'nik, ZF
    Ber, BY
    Drozdov, YN
    INORGANIC MATERIALS, 2003, 39 (01) : 3 - 5
  • [7] Exciton luminescence in Si1-xGex/Si heterostructures grown by molecular beam epitaxy
    Rowell, N.L.
    Noel, J.-P.
    Houghton, D.C.
    Wang, A.
    Lenchyshyn, L.C.
    Thewalt, M.L.W.
    Perovic, D.D.
    Journal of Applied Physics, 1993, 74 (04): : 2790 - 2805
  • [8] EXCITON LUMINESCENCE IN SI1-XGEX/SI HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    ROWELL, NL
    NOEL, JP
    HOUGHTON, DC
    WANG, A
    LENCHYSHYN, LC
    THEWALT, MLW
    PEROVIC, DD
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) : 2790 - 2805
  • [9] Surface phenomena and kinetics of Si1-xGex/Si (0<=x<1) growth by molecular beam epitaxy using Si2H6 and Ge/GeH4
    Zhang, FC
    Singh, J
    Bhattacharya, PK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 2378 - 2380
  • [10] Analysis of the gain and luminescence properties of Si/Si1-xGex:Er/Si heterostructures produced by sublimation molecular-beam epitaxy in a gas phase
    Krasil'nikova, LV
    Stepikhova, MV
    Drozdov, YN
    Drozdov, MN
    Krasil'nik, ZF
    Shengurov, VG
    Chalkov, VY
    Svetlov, SP
    Gusev, OB
    PHYSICS OF THE SOLID STATE, 2005, 47 (01) : 93 - 97