Ge doping effect on properties of AgInSe2 thin films

被引:0
|
作者
Ema, Yoshinori [1 ]
Kato, Hiroshi [1 ]
Takahashi, Takahiro [1 ]
机构
[1] Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan
关键词
Electric conductivity - Evaporation - Glass - Raman scattering - Scanning electron microscopy - Secondary ion mass spectrometry - Semiconducting germanium - Semiconductor doping - Silver alloys - Stoichiometry - Substrates;
D O I
10.1143/jjap.41.1527
中图分类号
学科分类号
摘要
The effect of Ge doping on the properties of AgInSe2 thin films has been investigated by the co-evaporation of AgInSe2 alloy chunks, Se and Ge on Coming 7059 glass substrates. Samples were nearly stoichiometric and contained very small amounts of Ge. They showed a highly [112]-oriented chalcopyrite structure, good optical transmittance spectra in the IR region (λ. = 1-2.6 μm) and an increase of n-type conductivity compared with the nondoped sample. Raman scattering suggested that the doped Ge atoms replaced some of the In atoms in the chalcopyrite structure. The Ge-doped sample grew uniformly from the beginning of film deposition.
引用
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页码:1527 / 1531
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