Ge doping effect on properties of AgInSe2 thin films

被引：0

作者：

Ema, Yoshinori ^{[1
]}

Kato, Hiroshi ^{[1
]}

Takahashi, Takahiro ^{[1
]}

机构：

[1] Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 3 A期

关键词：

Electric conductivity - Evaporation - Glass - Raman scattering - Scanning electron microscopy - Secondary ion mass spectrometry - Semiconducting germanium - Semiconductor doping - Silver alloys - Stoichiometry - Substrates;

D O I：

10.1143/jjap.41.1527

中图分类号：

学科分类号：

摘要：

The effect of Ge doping on the properties of AgInSe2 thin films has been investigated by the co-evaporation of AgInSe2 alloy chunks, Se and Ge on Coming 7059 glass substrates. Samples were nearly stoichiometric and contained very small amounts of Ge. They showed a highly [112]-oriented chalcopyrite structure, good optical transmittance spectra in the IR region (λ. = 1-2.6 μm) and an increase of n-type conductivity compared with the nondoped sample. Raman scattering suggested that the doped Ge atoms replaced some of the In atoms in the chalcopyrite structure. The Ge-doped sample grew uniformly from the beginning of film deposition.

引用

页码：1527 / 1531

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