KKR-CPA study of electronic structure and relative stability of Mg2X (X = Si, Ge, Sn) thermoelectrics containing point defects

被引：0
|
作者：
Zwolenski, P. [1 ]
Tobola, J. [1 ]
Kaprzyk, S. [1 ]
机构：
[1] AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Al. Mickiewicza 30, Krakow,30-059, Poland
来源：
Journal of Alloys and Compounds | 2015年 / 627卷
关键词：
Electronic structure;
D O I：
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学科分类号：
摘要：
Journal article (JA)
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页码：85 / 90
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