VALENCE BANDS OF MG2X (X = SI, GE, SN) SEMICONDUCTING COMPOUNDS

被引:34
|
作者
TEJEDA, J [1 ]
CARDONA, M [1 ]
机构
[1] MAX PLANCK INST FESTKORPER FORSCH,D-7000 STUTTGART,FED REP GER
来源
PHYSICAL REVIEW B | 1976年 / 14卷 / 06期
关键词
D O I
10.1103/PhysRevB.14.2559
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2559 / 2568
页数:10
相关论文
共 50 条
  • [1] Parameters of Fundamental Optical Functions and Elementary Transition Bands for Mg2X Compounds (X = Si, Ge, Sn)
    Sobolev, V. Val.
    Kalugin, A. I.
    Antonov, E. A.
    JOURNAL OF APPLIED SPECTROSCOPY, 2021, 88 (01) : 137 - 145
  • [2] Parameters of Fundamental Optical Functions and Elementary Transition Bands for Mg2X Compounds (X = Si, Ge, Sn)
    V. Val. Sobolev
    A. I. Kalugin
    E. A. Antonov
    Journal of Applied Spectroscopy, 2021, 88 : 137 - 145
  • [3] CONDUCTION IN AMORPHOUS MG2X COMPOUNDS (X = GE AND SN)
    HAUSER, JJ
    PHYSICAL REVIEW B, 1975, 11 (10): : 3860 - 3867
  • [4] Synthesis of Mg2X (X = Si, Ge, or Sn) intermetallics by mechanical alloying
    Clark, CR
    Wright, C
    Suryanarayana, C
    Baburaj, EG
    Froes, FH
    MATERIALS LETTERS, 1997, 33 (1-2) : 71 - 75
  • [5] MOLECULAR BONDING IN THE CONDUCTION STATES OF THE MG2X (X = SI, GE, SN) SEMICONDUCTORS
    BERTONCINI, R
    MELONI, F
    SERRA, M
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1985, 5 (02): : 124 - 132
  • [6] KKR-CPA Study of Mg2X (X=Si, Ge, Sn) Thermoelectric Materials
    Zwolenski, P.
    Tobola, J.
    Kaprzyk, S.
    9TH EUROPEAN CONFERENCE ON THERMOELECTRICS (ECT2011), 2012, 1449 : 41 - 44
  • [7] Response of Mg2X (X = Si, Ge and Sn) compounds to extreme uniaxial compression: first-principles calculations
    Behar, Fatima Zohra
    Meskine, Said
    Boukortt, Abdelkader
    Benbedra, Abdesamed
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 2024, 32 (02)
  • [8] First principles study of electronic, elastic and lattice dynamical properties of Mg2X (X= Si, Ge and Sn) compounds
    Pandit, Premlata
    Sanyal, Sankar P.
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2011, 49 (10) : 692 - 697
  • [9] A Theoretical Search for Efficient Dopants in Mg2X (X = Si, Ge, Sn) Thermoelectric Materials
    Zwolenski, P.
    Tobola, J.
    Kaprzyk, S.
    JOURNAL OF ELECTRONIC MATERIALS, 2011, 40 (05) : 889 - 897
  • [10] A Theoretical Search for Efficient Dopants in Mg2X (X = Si, Ge, Sn) Thermoelectric Materials
    P. Zwolenski
    J. Tobola
    S. Kaprzyk
    Journal of Electronic Materials, 2011, 40 : 889 - 897