Visible photoluminescence from Si+-implanted SiO2 films after high-temperature rapid thermal annealing

被引：0
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作者：
机构：
[1] Juodkazis, Saulius
[2] 2,Eliseev, Petr G.
[3] Watanabe, Mitsuru
[4] Sun, Hong-Bo
[5] Matsuo, Shigeki
[6] Sugahara, Tomoya
[7] Sakai, Shiro
[8] Misawa, Hiroaki
来源：
Tsai, Jen-Hwan | 2000年 / JJAP, Tokyo卷 / 39期
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D O I：
10.1143/jjap.39.l107
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摘要：
16
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