共 50 条
- [1] Visible photoluminescence from Si+-implanted SiO2 films after high-temperature rapid thermal annealing JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (2A): : L107 - L109
- [5] Photoluminescence mechanisms in Si+-implanted dry SiO2 films after rapid thermal annealing at dissociation temperature of a-SiO2 phase variance JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (03): : 1389 - 1392
- [9] The Effect of Post-Conventional Thermal Annealing Process on the Photoluminescence Characteristics of Si+-implanted SiO2 Thin Films HIGH-PERFORMANCE CERAMICS VIII, 2014, 602-603 : 1013 - 1016