Ge2Sb2Se4Te on n=1 ITO: a monolithic platform for integrated photonics with mode symmetrization and post-fabrication tuning [Invited]

被引：1
|
作者：
Acharjee, Niloy [1 ,2 ]
Sun, Hongyi [1 ,3 ]
Ni, Jimmy H. [4 ]
Ghosh, Siddhartha [5 ]
Ocampo, Carlos A. Bios [1 ,2 ,3 ]
机构：
[1] Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA
[2] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA
[3] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA
[4] US Army Combat Capabil Dev Command, Adelphi, MD 20783 USA
[5] Space Syst Northrop Grumman, 1 Space Pk Blvd, Redondo Beach, CA 90278 USA
来源：
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 2024年 / 41卷 / 11期
关键词：
PHASE-CHANGE MATERIALS; OPTICAL WAVE-GUIDES; SILICON-NITRIDE; GENERATION; FILTER; FILMS;
D O I：
10.1364/JOSAB.533128
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrate, to our knowledge, a novel monolithic platform for photonic integrated circuits (PICs) based on amorphous-Ge2Sb2Se4Te (am-GSST). Additionally, we explore the concept of mode symmetrization using the epsilon-near-zero behavior displayed by indium-tin-oxide (ITO) to achieve a substrate with n = 1 at 1550 nm, the same as the air cladding. We designed, fabricated, and characterized various on-chip components using this platform, including waveguides with preliminary 5.57 +/- 0.365 dB/mm propagation loss. Furthermore, we propose a post-fabrication tuning of the refractive index by using the phase change nature of GSST to crystallize local sections of the waveguides using electron beams. Our substrate-blind approach is a versatile platform for post-fabrication tunable PICs that could benefit intricate on-chip nanophotonic structures requiring enhanced and symmetric mode confinement. (c) 2024 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.
引用
收藏
页码：D81 / D87
页数：7
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