High-temperature electronics packaging for simulated venus condition

被引:0
|
作者
Nasiri A. [1 ]
Ang S.S. [1 ]
Cannon T. [1 ]
Porter E.V. [1 ]
Porter K.U. [1 ]
Chapin C. [2 ]
Chen R. [2 ]
Senesky D.G. [2 ]
机构
[1] High-Density Electronics Center, University of Arkansas, Fayetteville, 72701, AR
[2] EXtreme Environment Microsystems Lab, Stanford University, Stanford, 94305, CA
基金
美国国家航空航天局;
关键词
Ceramic die attach; Ceramic encapsulation; High-temperature electronics packaging substrate;
D O I
10.4071/imaps.1115241
中图分类号
学科分类号
摘要
An electronic packaging technology that survives the simulated Venusian surface temperature of 465°C and 96 bar pressure in carbon dioxide (CO2) and nitrogen environments, without the corrosive trace gases, was developed. Alumina ceramic substrates and gold conductors on alumina were evaluated for electrical and mechanical performance. The most promising die-attach materials are thick-film gold and alumina-based ceramic pastes. Alumina, sapphire, silicon, and silicon carbide dies were attached to the alumina substrates using these die-attach materials and exposed to 96 bar pressure in a CO2 environment at 465°C for 244 h. The ceramic die-attach material showed consistent shear strengths before and after the test. An alumina ceramic encapsulation material was also evaluated for thermomechanical stability. The devices on the packaging substrates were encapsulated by a ceramic encapsulation with no significant increase in cracks and voids after the Venusian simulator test. Wire pull strength tests were conducted on the gold bond wire to evaluate mechanical durability before and after the Venusian simulator exposure. The average gold bond wire pull strengths before and after exposure were 5.78 g-F and 4 g-F for 1-mil gold bond wires, respectively, meeting the minimum MIL-STD-885 2011.9 standard. The overall wire bond daisy chain resistance change was .47% after the Venus simulator test, indicating a promising wire bond integrity. A titanium package was fabricated to house the ceramic packaging substrate and a two-level metalized feedthrough was fabricated to provide electrical interfaces to the package. © 2020 International Microelectronics Assembly and Packaging Society and alumina-based ceramic pastes were evaluated. Gold wire bonds were used to electrically connect the various electronic dies and packaging substrates. Some of the devices on the packaging substrates were encapsulated by a glob-top ceramic encapsulation. The high-temperature packaging substrates, with and without the encapsulation material, were exposed to 500°C for at least 100 h as well as thermal cycling from room temperature to 500°C. These packaging structures were further exposed to a simulated Venus environment test chamber at 465°C and 92-96 bar pressure in a CO2 environment. The test results showed that these packaging materials survived the simulated Venus's surface environment for up to 244 h. A titanium package to house the high-temperature packaging substrates was fabricated to provide electrical interfaces to the package.
引用
收藏
页码:59 / 66
页数:7
相关论文
共 50 条
  • [21] Packaging Material Issues in High Temperature Power Electronics
    Boettge, B.
    Naumann, F.
    Klengel, R.
    Klengel, S.
    Petzold, M.
    2013 EUROPEAN MICROELECTRONICS PACKAGING CONFERENCE (EMPC), 2013,
  • [22] HIGH-TEMPERATURE ELECTRONICS APPLICATION IN WELL LOGGING
    TRAEGER, RK
    LYSNE, PC
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (01) : 852 - 854
  • [23] Potential of BiSn solders for high-temperature electronics
    Novikov, Andrej
    Nowottnick, Mathias
    2018 7TH ELECTRONIC SYSTEM-INTEGRATION TECHNOLOGY CONFERENCE (ESTC), 2018,
  • [24] Reliable electronics for high-temperature downhole applications
    1600, Soc Pet Eng (SPE), Richardson (52):
  • [25] A review of high-temperature electronics technology and applications
    Jeff Watson
    Gustavo Castro
    Journal of Materials Science: Materials in Electronics, 2015, 26 : 9226 - 9235
  • [26] The changing automotive environment: High-temperature electronics
    Johnson, RW
    Evans, JL
    Jacobsen, P
    Thompson, JRR
    Christopher, M
    IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING, 2004, 27 (03): : 164 - 176
  • [28] EPITAXIAL HETEROSTRUCTURES FOR HIGH-TEMPERATURE SUPERCONDUCTING ELECTRONICS
    INAM, A
    ROGERS, CT
    VENKATESAN, T
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 50 - 50
  • [29] Reliable electronics for high-temperature downhole applications
    Gingerich, BL
    Brusius, PG
    Maclean, IM
    JOURNAL OF PETROLEUM TECHNOLOGY, 2000, 52 (07): : 56 - 57
  • [30] Review of High-Temperature Power Electronics Converters
    Xiao, Yudi
    Zhang, Zhe
    Duraij, Martijn Sebastiaan
    Zsurzsan, Tiberiu-Gabriel
    Andersen, Michael A. E.
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2022, 37 (12) : 14831 - 14849