Shape of SiC bulk single crystal grown by sublimation

被引：0
|
作者：
Nishizawa, Shin-Ichi [1 ]
Kitou, Yasuo [2 ]
Bahng, Wook [1 ]
Oyanagi, Naoki [2 ]
Khan, Muhammad Nasir [1 ]
Arai, Kazuo [1 ]
机构：
[1] Electrotechnical Laboratory, UPR Ultra-Low-Loss Pwr. Device T., 1-1-4 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
[2] Advanced Power Devices Laboratory, R. D. Assoc. of Fut. Electron Device, UPR Ultra-Low-Loss Pwr. Device T., 1-1-4 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
Computer simulation - Crystal growth - Crystal structure - Electromagnetic fields - Mathematical models - Semiconducting silicon compounds - Semiconductor growth - Single crystals - Sublimation - Temperature distribution - Thermal gradients;
D O I：
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学科分类号：
摘要：
Numerical simulation of sublimation SiC bulk single crystal growth was performed. Electromagnetic and temperature fields in a growth furnace were analyzed numerically. The relation between grown crystal shape and temperature distribution in a growth cavity was discussed. It is pointed out that the crystal shape has a close relationship with temperature distribution. By modifying the crucible design and temperature distribution in a growth cavity, it is possible to enhance the enlargement of grown crystal, and also possible to keep grown surface flat.
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