Research Progress of Large-area and High-quality Graphene Prepared by Chemical Vapor Deposition

被引：0
|
作者：
Shi X. [1 ]
Wang W. [1 ]
Yin Q. [1 ]
Li C. [1 ]
机构：
[1] Tianjin Key Laboratory of Electronic Materials and Device, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin
来源：
Cailiao Daobao/Materials Review | 2017年 / 31卷 / 02期
关键词：
Carbon source; Chemical vapor deposition; Graphene; Growth conditions; Substrate;
D O I：
10.11896/j.issn.1005-023X.2017.03.022
中图分类号：
学科分类号：
摘要：
Graphene, as a new kind of carbonaceous materials, is formed by the close accumulation of a single layer of carbon atoms. It has many unique properties such as electricity, photology, thermology and mechanics. Among all the methods for preparation of graphene, chemical vapor deposition (CVD) is the most likely to achieve controllable preparation of a large-area and high-qua-lity graphene. In this paper, we mainly overview the influence factors of large-area and high-quality graphene prepared by CVD, including substrate, carbon source and growth conditions (gas flow rate, growth temperature, plasma power, growth pressure, deposition time, cooling rate, etc). Finally, the development direction of the preparation of graphene by CVD method is proposed. © 2017, Materials Review Magazine. All right reserved.
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页码：136 / 142
页数：6
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