Evaluation of high-transmittance attenuated phase shifting mask for 157 nm lithography

被引:0
|
作者
Yamabe, Osamu [1 ]
Watanabe, Kunio [1 ]
Itani, Toshiro [1 ]
机构
[1] SLET, Inc., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
关键词
D O I
10.1143/jjap.41.4042
中图分类号
学科分类号
摘要
9
引用
收藏
页码:4042 / 4045
相关论文
共 50 条
  • [41] Chromium fluoride attenuated phase-shifting mask for argon fluoride excimer laser lithography
    Ushioda, J
    Seki, Y
    Maeda, K
    Ohfuji, T
    Tanabe, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (12B): : 6356 - 6359
  • [42] Application of zirconium silicon oxide films to an attenuated phase-shifting mask in ArF lithography
    Matsuo, T
    Onodera, T
    Nakazawa, K
    Ogawa, T
    Morimoto, H
    Haraguchi, T
    Fukuhara, N
    Matsuo, T
    Otaki, M
    Takeuchi, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (12B): : 7004 - 7007
  • [43] Application of zirconium silicon oxide films to an attenuated phase-shifting mask in ArF lithography
    Matsuo, Takahiro
    Onodera, Toshio
    Nakazawa, Keisuke
    Ogawa, Tohru
    Morimoto, Hiroaki
    Haraguchi, Takashi
    Fukuhara, Nobuhiko
    Matsuo, Tadashi
    Otaki, Masao
    Takeuchi, Susumu
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (12 B): : 7004 - 7007
  • [44] A simpler attenuated phase-shifting mask
    Zhang, J
    Feng, BR
    Hou, DS
    Zhou, CX
    Yao, HM
    Guo, YK
    Chen, F
    Sun, F
    Su, P
    OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 : 1175 - 1178
  • [45] Optical properties of thin amorphous silicon film on a phase shift mask for 157 nm lithography
    Kim, SK
    Kim, YS
    Choi, YM
    Choi, JW
    Hong, J
    Shon, JM
    Sung, TH
    No, KS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (5A): : 2523 - 2529
  • [46] Feasibility study on the ArF attenuated phase shift mask for 100nm-node lithography
    Koo, SS
    Kim, SJ
    Paek, SW
    Ahn, CN
    Ham, YM
    Shin, KS
    OPTICAL MICROLITHOGRAPHY XIV, PTS 1 AND 2, 2001, 4346 : 770 - 777
  • [47] New systematic evaluation method for attenuated phase-shifting mask specifications
    Kagami, I
    Sugawara, M
    Kawahira, H
    Tsudaka, K
    Ishikawa, K
    Nozawa, S
    Shimizu, H
    Ogawa, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (12B): : 6590 - 6597
  • [48] High density lithography using attenuated phase shift mask and negative resist
    Pau, S
    Cirelli, R
    Bolan, K
    Timko, AG
    Frackoviak, J
    Watson, GP
    Trimble, LE
    Blatchford, JW
    Nalamasu, O
    OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 : 266 - 270
  • [49] High transparency resists for 157 nm lithography
    Itani, T
    Ishikawa, S
    Irie, S
    Hagiwara, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06): : 3181 - 3185
  • [50] Simulation and characterization of silicon oxynitrofluoride film as a phase shift mask material for 157 nm optical lithography
    Kim, S
    Choi, E
    Kim, H
    Kim, J
    No, K
    OPTICAL MICROLITHOGRAPHY XV, PTS 1 AND 2, 2002, 4691 : 1696 - 1702