Electrical properties of the InGaP/InGaAs/Ge triple-junction solar cell under high concentration photovoltaic system based on field-test experimental

被引：0
|
作者：
Wang, Zilong [1 ]
Zhang, Hua [1 ]
Zhao, Wei [1 ]
Liu, Yefeng [1 ]
Zhang, Haitao [1 ]
机构：
[1] School of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
来源：
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | 2013年 / 34卷 / 01期
关键词：
Photoelectrochemical cells - Solar radiation - Efficiency - Solar power generation - Gallium compounds - Heat pipes;
D O I：
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摘要：
A dish-style concentrating photovoltaic system was designed and built in this article. The concentration ratio of this system was 150 and the photovoltaic cell was cooled by heat pipe. The author measured the performance of triple-junction InGaP/InGaAs/Ge solar cell. According to experiment result, the peak output power of the system was 1.5315 W/cm2, the average output power was 1.20 W/cm2 and the average efficiency was 26.58%, the average working temperature was 46.875°C and the maximum working temperature didn't exceed 62.05°C. The influencing factors of the InGaP/InGaAs/Ge triple-junction solar cell electrical properties mainly include direct solar radiation and solar cell temperature. This system had its own advantage comparing to existing stationary photovoltaic system such as high efficiency and better electrical performance. The cell temperature, output power and efficiency were collected in this experiment which would be valuable reference for further research.
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页码：39 / 44
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