Investigation of structural defects during 4H-SiC Schottky diode processing by synchrotron topography

被引：0
|
作者：
Pernot, E. [1 ]
Neyret, E. [2 ]
Moulin, C. [2 ]
Pernot-Rejmánková, P. [3 ]
Templier, F. [2 ]
Di Cioccio, L. [2 ]
Billon, T. [2 ]
Madar, R. [1 ]
机构：
[1] LMGP-ENSPG, Domaine Universitaire, BP 46, FR-38402 St. Martin d'Heres Cedex, France
[2] CEA/LETI, 17 rue des Martyrs, FR-38054 Grenoble Cedex, France
[3] European Synchrotron Radiation Facilities, BP 220, FR-38042 Grenoble Cedex, France
来源：
Materials Science Forum | 2002年 / 389-393卷 / 01期
关键词：
Defects - Electric potential - Epitaxial growth - Grain boundaries - Silicon carbide - Synchrotrons - Topography;
D O I：
10.4028/www.scientific.net/msf.389-393.419
中图分类号：
学科分类号：
摘要：
Structural defects in a 4H-SiC wafer were investigated at several steps of a Schottky diode processing. Monochromatic and white beam synchrotron topography were performed to study structural defects on bare wafer, after epitaxy and after device processing. The dislocation, micropipe and subgrain boundary densities were not modified with processing. On the other hand, the wafer curvature is modified at each step. Finally, a correlation between structural defects and low reverse voltage characteristics has been carried out on Schottky diodes. © 2002 Trans Tech Publications.
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页码：419 / 422
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