Investigation of the mechanism and model about Ni based ohmic contacts to n-type SiC

被引：0
|
作者：
Guo, Hui [1 ,2 ]
Zhang, Yimen [1 ,2 ]
Zhang, Yuming [1 ,2 ]
Lu, Hongliang [1 ,2 ]
机构：
[1] Microelectronic School, Xidian University, Xi'an 710071, China
[2] Key Lab. of Wide Band-gap Semiconductor Materials and Devices, Xi'an 710071, China
来源：
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 2008年 / 28卷 / 01期
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页码：42 / 45
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