Structure and dielectric properties of Fe and Ni doped (Zr,Sn) TiO4 ceramic

被引:0
|
作者
Chen, Li-Ying [1 ]
Wu, Shun-Hua [1 ]
Dong, Xiang-Hong [1 ]
机构
[1] Coll. of Electron. Info. Eng., Tianjin Univ., Tianjin 300072, China
来源
关键词
Dielectric properties - Doping (additives) - Ferrite - Nickel - Sintering - Titanium oxides;
D O I
暂无
中图分类号
学科分类号
摘要
The dielectric ceramic with a main crystal phase of (Zr,Sn) TiO4 was prepared by conventional electronic ceramics technology. The structure of (Zr,Sn) TiO4 is orthorhombic with space group Pbcn. The effects of Fe and Ni doping on the dielectric properties of (Zr,Sn) TiO4 system ceramics were investigated. Fe dopants decrease the sintering temperature and reduce Q values of the system (Q=1/tgδ). With both Fe and Ni doping, the decreasing of Q factor can be suppressed. Because of Ni ions probably suppressing the diffusion of Fe ions into the grain, Fe ions stay at the grain boundaries and form the Fe-Ni spinel structure, which reduces the effects of Fe ions on Q values.
引用
收藏
页码:504 / 508
相关论文
共 50 条
  • [1] Structure and dielectric properties of Fe and Ni doped (Zr,Sn)TiO4 ceramic
    Chen, LY
    Wu, SH
    Dong, XH
    [J]. JOURNAL OF INORGANIC MATERIALS, 2002, 17 (03) : 504 - 508
  • [2] MICROSTRUCTURAL DEVELOPMENT IN A (ZR,SN)TIO4 DIELECTRIC CERAMIC
    AZOUGH, F
    BROUGH, I
    KENWAY, P
    FREER, R
    LORIMER, GW
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (98): : 431 - 434
  • [3] Microstructure and microwave dielectric properties of multi-oxide-doped (Zr, Sn)TiO4 ceramics
    Xiaoshun Zhang
    Chunlin Li
    Yang Lu
    Yiting Shan
    Xianfu Luo
    Qianqian Xian
    Hongqing Zhou
    [J]. Journal of Materials Science: Materials in Electronics, 2022, 33 : 22153 - 22161
  • [4] Microstructure and microwave dielectric properties of multi-oxide-doped (Zr, Sn)TiO4 ceramics
    Zhang, Xiaoshun
    Li, Chunlin
    Lu, Yang
    Shan, Yiting
    Luo, Xianfu
    Xian, Qianqian
    Zhou, Hongqing
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2022, 33 (28) : 22153 - 22161
  • [5] Effects of additives on microstructures and microwave dielectric properties of (Zr, Sn)TiO4 ceramics
    Huang, CL
    Weng, MH
    Chen, HL
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 2001, 71 (01) : 17 - 22
  • [6] Microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics doped with WO3
    Ahn, YS
    Yoon, KH
    Kim, ES
    [J]. FERROELECTRICS, 2001, 257 (1-4) : 123 - 128
  • [7] Cryogenic microwave dielectric properties of sintered (Zr0.8Sn0.2)TiO4 doped with CuO and ZnO
    Jacob, M. V.
    Pamu, D.
    Raju, K. C. James
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2007, 90 (05) : 1511 - 1514
  • [8] Preparation and electrical properties of (Zr,Sn)TiO4 dielectric thin films by laser ablation
    Nakagawara, O
    Tabata, H
    Toyota, Y
    Kobayashi, M
    Yoshino, Y
    Katayama, Y
    Kawai, T
    [J]. EPITAXIAL OXIDE THIN FILMS II, 1996, 401 : 97 - 102
  • [9] Low-temperature sintering and microwave dielectric properties of (Zr,Sn)TiO4 ceramics
    Huang, GH
    Zhou, DX
    Xu, JM
    Chen, XP
    Zhang, DL
    Lu, WZ
    Li, BY
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 99 (1-3): : 416 - 420
  • [10] Structural and dielectric properties of ZnO-doped (Zr0.8Sn0.2)TiO4 films at radio frequency
    Hsu, CS
    Huang, CL
    [J]. INTEGRATED FERROELECTRICS, 2003, 51 : 127 - 136