Structural and dielectric properties of ZnO-doped (Zr0.8Sn0.2)TiO4 films at radio frequency

ZnO-doped (Zr0.8Sn0.2)TiO4 thin films were prepared by rf magnetron sputtering on n-type Si(100) substrates at different rf power and substrate temperature have been investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the deposition conditions, such as rf power (300 W-400 W) and substrate temperature (400degreesC-450degreesC). The measurement with radio frequency is taken with a vector network analyzer and a ground-signal probe. The dielectric properties of thin film with radio frequency were strongly depended on the quality of the surface microstructure. Besides, the dielectric constants of ZST films were decreased with increasing frequency. For f = 2.5 GHz, the dielectric constant of 28 was obtained at a rf power level of 400 W and substrate temperature of 450degreesC and it may applied to integrated the communication component such as chip capacitor with Bluetooth or PCS system.