The injected dark current of a p+n and a p+n n+ silicon solar cell taking into account the narrowing of band gap due to heavy doping

被引：0
|
作者：
机构：
[1] Biswas, Ashim Kumar
[2] Biswas, Sayantan
[3] Chatterjee, Avigyan
[4] Sinha, Amitabha
来源：
Sinha, Amitabha (asinha333@gmail.com) | 1600年 / International Journal of Renewable Energy Research卷 / 06期
关键词：
20;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] REVERSE ANNEALING BEHAVIOR AND SHALLOW P+N JUNCTION CHARACTERISTICS OF BF2+ IMPLANTED SILICON
    LIU, JL
    ZHANG, TQ
    YANG, XY
    VACUUM, 1989, 39 (2-4) : 217 - 218
  • [42] CURRENT GAIN ENHANCEMENT IN LATERAL P-N-P TRANSISTORS BY AN OPTIMIZED GAP IN N+ BURIED LAYER
    BHAT, KN
    ACHUTHAN, MK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 205 - 214
  • [43] An investigation of the effects of iron in p+n silicon diodes for simulated plasma source ion implantation studies
    Brown, KM
    Shohet, JL
    Booske, JH
    Gearhart, SS
    Liu, HL
    Snodgrass, TG
    Speth, RR
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1999, 12 (04) : 452 - 456
  • [44] The Photocurrent and Spectral Response of a Proposed p(+)p n n(+) Silicon Solar Cell
    Biswas, Ashim Kumar
    Biswas, Sayantan
    Sinha, Amitabha
    INTERNATIONAL JOURNAL OF RENEWABLE ENERGY RESEARCH, 2018, 8 (01): : 82 - 89
  • [45] Photocurrent simulation in an n-p-n-p silicon multilayer solar cell
    Bouzidi, A
    Bouazzi, AS
    Rezig, B
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2005, 31 (01): : 11 - 16
  • [46] 4H-SiC P+N UV Photodiodes : a Comparison between Beam and Plasma Doping Processes
    Biondo, S.
    Ottaviani, L.
    Lazar, M.
    Planson, D.
    Duchaine, J.
    Le Borgne, V.
    El Khakani, M. A.
    Milesi, F.
    Vervischt, W.
    Palais, O.
    Torregrosa, F.
    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 1203 - +
  • [47] PRECIPITATION-INDUCED CURRENTS AND GENERATION-RECOMBINATION CURRENTS IN INTENTIONALLY CONTAMINATED SILICON P+N JUNCTIONS
    BUSTA, HH
    WAGGENER, HA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) : 1424 - 1429
  • [48] FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS
    SAH, CT
    REDDI, VGK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 345 - +
  • [49] Thick Microporous Silicon Layers Etching Involving p+n Back Side Hole Injection in Highly Resistive n-Type Substrates
    Coudron, Loic
    Gautier, Gael
    Morillon, Benjamin
    Kouassi, Sebastien
    Defforge, Thomas
    Ventura, Laurent
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (01) : II24 - II26
  • [50] THERMAL AND OPTICAL GENERATION CURRENT IN REVERSE-BIASED GOLD-DOPED SILICON P+N JUNCTIONS WITHOUT DEPLETION APPROXIMATION
    BRAUN, S
    GRIMMEISS, HG
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2789 - 2794
12345