Optical characterization of heavily Sn-doped GaAs1-xSb x epilayers grown by molecular beam epitaxy on (001) GaAs substrates

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[1] Nishino, Fumio
[2] Takei, Tatsuya
[3] Kato, Ariyuki
[4] Jinbo, Yoshio
[5] Uchitomi, Naotaka
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Uchitomi, N. (uchitomi@nagaokaut.ac.jp) | 1600年 / Japan Society of Applied Physics卷 / 44期
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Gallium compounds;
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