Influence of carrier gas flow rate on the optical properties of GaN films grown by HVPE

被引：0
|
作者：
Lu, Dianqing [1 ]
Zhang, Rong [1 ]
Xiu, Xiangqian [1 ]
Li, Jie [1 ]
Gu, Shulin [1 ]
Shen, Bo [1 ]
Shi, Yi [1 ]
Zheng, Youdou [1 ]
机构：
[1] Dept. of Phys., Nanjing Univ., Nanjing 210093, China
来源：
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 2002年 / 22卷 / 04期
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摘要：
Vapor phase epitaxy
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页码：385 / 390
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